Ferroic tunnel junctions and their application in neuromorphic networks

Energy-Efficient Organic Ferroelectric Tunnel Junction Memristors for Neuromorphic Computing

(2019) Sayani Majumdar et al.   Advanced Electronic Materials

A Spin-Orbit-Torque Memristive Device

(2019) Shuai Zhang et al.   Advanced Electronic Materials

Voltage-Controlled Spintronic Stochastic Neuron Based on a Magnetic Tunnel Junction

(2019) Jialin Cai et al.   Physical Review Applied

Memristive Devices and Networks for Brain‐Inspired Computing

(2019) Teng Zhang et al.   Physica Status Solidi-Rapid Research Letters

Memristive crossbar arrays for brain-inspired computing

(2019) Qiangfei Xia et al.   NATURE MATERIALS

Tuning a Binary Ferromagnet into a Multistate Synapse with Spin-Orbit-Torque-Induced Plasticity

(2019) Yi Cao et al.   ADVANCED FUNCTIONAL MATERIALS

Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin–Orbit Torque Switching

(2019) Aleksandr Kurenkov et al.   ADVANCED MATERIALS

Nanoscale resistive switching memory devices: a review

(2019) Stefan Slesazeck et al.   NANOTECHNOLOGY

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

(2019) A. Manchon et al.   REVIEWS OF MODERN PHYSICS

Magnetic Tunnel Junctions Based on Ferroelectric Hf0.5Zr0.5O2 Tunnel Barriers

(2019) Yingfen Wei et al.   Physical Review Applied

Control of Synaptic Plasticity Learning of Ferroelectric Tunnel Memristor by Nanoscale Interface Engineering

(2018) Rui Guo et al.   ACS Applied Materials & Interfaces

Flexible Neuromorphic Architectures Based on Self-Supported Multi-Terminal Organic Transistors

(2018) Ying Fu et al.   ACS Applied Materials & Interfaces

Memristors: Memristor with Ag-Cluster-Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing (Adv. Funct. Mater. 1/2018)

(2018) Xiaobing Yan et al.   ADVANCED FUNCTIONAL MATERIALS

Novel Electronics for Flexible and Neuromorphic Computing

(2018) Han Eol Lee et al.   ADVANCED FUNCTIONAL MATERIALS

Perspective: Stochastic magnetic devices for cognitive computing

(2018) Kaushik Roy et al.   JOURNAL OF APPLIED PHYSICS

Oxide-based RRAM materials for neuromorphic computing

(2018) XiaoLiang Hong et al.   JOURNAL OF MATERIALS SCIENCE

Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks

(2018) Daniele Ielmini   MICROELECTRONIC ENGINEERING

Spin transport and spin torque in antiferromagnetic devices

(2018) J. Železný et al.   Nature Physics

Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators

(2018) X. Z. Chen et al.   PHYSICAL REVIEW LETTERS

A bioinspired flexible organic artificial afferent nerve

(2018) Yeongin Kim et al.   SCIENCE

Neural-like computing with populations of superparamagnetic basis functions

(2018) Alice Mizrahi et al.   Nature Communications

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance

(2018) S. Yu. Bodnar et al.   Nature Communications

Skyrmion Gas Manipulation for Probabilistic Computing

(2018) D. Pinna et al.   Physical Review Applied

A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions

(2018) Weichuan Huang et al.   Advanced Electronic Materials

Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

(2018) Lin Chen et al.   Nanoscale

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

(2018) H. Wang et al.   Nature Communications

Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing

(2018) Herng Yau Yoong et al.   ADVANCED FUNCTIONAL MATERIALS

Self-Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

(2018) Xiaobing Yan et al.   ADVANCED MATERIALS

Vowel recognition with four coupled spin-torque nano-oscillators

(2018) Miguel Romera et al.   NATURE

A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films

(2018) Yingfen Wei et al.   NATURE MATERIALS

Spin-Orbit-Torque Memory Operation of Synthetic Antiferromagnets

(2018) Takahiro Moriyama et al.   PHYSICAL REVIEW LETTERS

Phase-Change Memory—Towards a Storage-Class Memory

(2017) Scott W. Fong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Neuromorphic computing with nanoscale spintronic oscillators

(2017) Jacob Torrejon et al.   NATURE

A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing

(2017) Yoeri van de Burgt et al.   NATURE MATERIALS

Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs

(2017) M. J. Grzybowski et al.   PHYSICAL REVIEW LETTERS

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

(2017) K. Olejník et al.   Nature Communications

Face classification using electronic synapses

(2017) Peng Yao et al.   Nature Communications

Learning through ferroelectric domain dynamics in solid-state synapses

(2017) Sören Boyn et al.   Nature Communications

Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability

(2017) Chaoxing Wu et al.   Nature Communications

Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO3-based heterojunctions

(2017) Zhen Fan et al.   Journal of Materials Chemistry C

Encoding neural and synaptic functionalities in electron spin: A pathway to efficient neuromorphic computing

(2017) Abhronil Sengupta et al.   Applied Physics Reviews

Low-Energy Truly Random Number Generation with Superparamagnetic Tunnel Junctions for Unconventional Computing

(2017) D. Vodenicarevic et al.   Physical Review Applied

Stochastic Spiking Neural Networks Enabled by Magnetic Tunnel Junctions: From Nontelegraphic to Telegraphic Switching Regimes

(2017) Chamika M. Liyanagedera et al.   Physical Review Applied

Flexible ferroelectric element based on van der Waals heteroepitaxy

(2017) Jie Jiang et al.   Science Advances

Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si

(2016) Anna Chernikova et al.   ACS Applied Materials & Interfaces

High-Speed and Low-Energy Nitride Memristors

(2016) Byung Joon Choi et al.   ADVANCED FUNCTIONAL MATERIALS

Choroidal Involution Is Associated with a Progressive Degeneration of the Outer Retinal Function in a Model of Retinopathy of Prematurity

(2016) Tianwei E. Zhou et al.   AMERICAN JOURNAL OF PATHOLOGY

Tunneling electroresistance effect in ultrathin BiFeO3-based ferroelectric tunneling junctions

(2016) Herng Yau Yoong et al.   APPLIED PHYSICS LETTERS

Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

(2016) Zhen Fan et al.   APPLIED PHYSICS LETTERS

Four-state non-volatile memory in a multiferroic spin filter tunnel junction

(2016) Jieji Ruan et al.   APPLIED PHYSICS LETTERS

Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

(2016) Zhen Fan et al.   APPLIED PHYSICS LETTERS

Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

(2016) Jiantao Zhou et al.   IEEE ELECTRON DEVICE LETTERS

A Vision for All-Spin Neural Networks: A Device to System Perspective

(2016) Abhronil Sengupta et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers

(2016) Lingfei Wang et al.   NANO LETTERS

Synthesis of freestanding single-crystal perovskite films and heterostructures by etching of sacrificial water-soluble layers

(2016) Di Lu et al.   NATURE MATERIALS

Magnetization switching by spin–orbit torque in an antiferromagnet–ferromagnet bilayer system

(2016) Shunsuke Fukami et al.   NATURE MATERIALS

Highly efficient and tunable spin-to-charge conversion through Rashba coupling at oxide interfaces

(2016) E. Lesne et al.   NATURE MATERIALS

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

(2016) Zhongrui Wang et al.   NATURE MATERIALS

A spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration

(2016) S. Fukami et al.   Nature Nanotechnology

Electrical switching of an antiferromagnet

(2016) P. Wadley et al.   SCIENCE

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Single crystal functional oxides on silicon

(2016) Saidur Rahman Bakaul et al.   Nature Communications

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

(2016) Wei Jin Hu et al.   Nature Communications

A ferroelectric memristor based on the migration of oxygen vacancies

(2016) Pengfei Hou et al.   RSC Advances

Predictive modelling of ferroelectric tunnel junctions

(2016) Julian P Velev et al.   npj Computational Materials

A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy

(2016) Steven Lequeux et al.   Scientific Reports

Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons

(2016) Abhronil Sengupta et al.   Scientific Reports

Strong Surface-Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

(2015) Hiroyuki Yamada et al.   ADVANCED FUNCTIONAL MATERIALS

Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems

(2015) Adrien F. Vincent et al.   IEEE Transactions on Biomedical Circuits and Systems

Ultrathin BaTiO3-Based Ferroelectric Tunnel Junctions through Interface Engineering

(2015) Changjian Li et al.   NANO LETTERS

Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

(2015) Xing Long Shao et al.   Nanoscale

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Phase-Change and Redox-Based Resistive Switching Memories

(2015) Dirk J. Wouters et al.   PROCEEDINGS OF THE IEEE

Spin Hall effects

(2015) Jairo Sinova et al.   REVIEWS OF MODERN PHYSICS

Four-state ferroelectric spin-valve

(2015) Andy Quindeau et al.   Scientific Reports

Functional ferroelectric tunnel junctions on silicon

(2015) Rui Guo et al.   Scientific Reports

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

(2015) H. M. Yau et al.   Scientific Reports

Tunnel junction based memristors as artificial synapses

(2015) Andy Thomas et al.   Frontiers in Neuroscience

Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3Multiferroic Tunnel Junctions

(2015) Yue-Wei Yin et al.   Advanced Electronic Materials

Engineering ferroelectric tunnel junctions through potential profile shaping

(2015) S. Boyn et al.   APL Materials

Flexible Crossbar-Structured Resistive Memory Arrays on Plastic Substrates via Inorganic-Based Laser Lift-Off

(2014) Seungjun Kim et al.   ADVANCED MATERIALS

Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

(2014) Anja Herpers et al.   ADVANCED MATERIALS

An Epitaxial Ferroelectric Tunnel Junction on Silicon

(2014) Zhipeng Li et al.   ADVANCED MATERIALS

Coexistence of four resistance states and exchange bias in La0.6Sr0.4MnO3/BiFeO3/La0.6Sr0.4MnO3 multiferroic tunnel junction

(2014) Y. K. Liu et al.   APPLIED PHYSICS LETTERS

Compact modelling of ferroelectric tunnel memristor and its use for neuromorphic simulation

(2014) Zhaohao Wang et al.   APPLIED PHYSICS LETTERS

Complex photonic lattices embedded with tailored intrinsic defects by a dynamically reconfigurable single step interferometric approach

(2014) Jolly Xavier et al.   APPLIED PHYSICS LETTERS

Memristive behaviors in Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions

(2014) Zheng Wen et al.   APPLIED PHYSICS LETTERS

Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

(2014) Seung Wook Ryu et al.   APPLIED PHYSICS LETTERS

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Phase change materials and phase change memory

(2014) Simone Raoux et al.   MRS BULLETIN

Nanoporous Silicon Oxide Memory

(2014) Gunuk Wang et al.   NANO LETTERS

Spin-transfer torque generated by a topological insulator

(2014) A. R. Mellnik et al.   NATURE

Multifunctional wearable devices for diagnosis and therapy of movement disorders

(2014) Donghee Son et al.   Nature Nanotechnology

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions

(2014) Rohit Soni et al.   Nature Communications

Non-volatile organic memory with sub-millimetre bending radius

(2014) Richard Hahnkee Kim et al.   Nature Communications

Ferroelectric tunnel junctions for information storage and processing

(2014) Vincent Garcia et al.   Nature Communications

Forming-Free Resistive Switching in Multiferroic BiFeO3 thin Films with Enhanced Nanoscale Shunts

(2013) Xin Ou et al.   ACS Applied Materials & Interfaces

Giant Electroresistance of Super-tetragonal BiFeO3-Based Ferroelectric Tunnel Junctions

(2013) Hiroyuki Yamada et al.   ACS Nano

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure

(2013) Zhongqiang Hu et al.   APPLIED PHYSICS LETTERS

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface

(2013) Y. W. Yin et al.   NATURE MATERIALS

Beyond the barrier

(2013) E. Y. Tsymbal et al.   NATURE MATERIALS

Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

(2013) Zheng Wen et al.   NATURE MATERIALS

Spin-torque building blocks

(2013) N. Locatelli et al.   NATURE MATERIALS

Non-volatile memory based on the ferroelectric photovoltaic effect

(2013) Rui Guo et al.   Nature Communications

Free-electron gas at charged domain walls in insulating BaTiO3

(2013) Tomas Sluka et al.   Nature Communications

Electrostatic Modulation of LaAlO3/SrTiO3Interface Transport in an Electric Double-Layer Transistor

(2013) Wei-Nan Lin et al.   Advanced Materials Interfaces

The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System

(2012) Patryk Krzysteczko et al.   ADVANCED MATERIALS

Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

(2012) Daniel Pantel et al.   APPLIED PHYSICS LETTERS

Visual Pattern Extraction Using Energy-Efficient “2-PCM Synapse” Neuromorphic Architecture

(2012) Olivier Bichler et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric and multiferroic tunnel junctions

(2012) E.Y. Tsymbal et al.   MRS BULLETIN

Ferroelectric Tunnel Memristor

(2012) D. J. Kim et al.   NANO LETTERS

Hybridizing Energy Conversion and Storage in a Mechanical-to-Electrochemical Process for Self-Charging Power Cell

(2012) Xinyu Xue et al.   NANO LETTERS

A ferroelectric memristor

(2012) André Chanthbouala et al.   NATURE MATERIALS

Reversible electrical switching of spin polarization in multiferroic tunnel junctions

(2012) D. Pantel et al.   NATURE MATERIALS

Current-induced torques in magnetic materials

(2012) Arne Brataas et al.   NATURE MATERIALS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Coexistance of Giant Tunneling Electroresistance and Magnetoresistance in an All-Oxide Composite Magnetic Tunnel Junction

(2012) Nuala Mai Caffrey et al.   PHYSICAL REVIEW LETTERS

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

(2012) L. Liu et al.   SCIENCE

Multiferroic tunnel junctions

(2012) Yue-Wei Yin et al.   Frontiers of Physics

Resistive Switching Behavior and Multiple Transmittance States in Solution-Processed Tungsten Oxide

(2011) Wei-Ting Wu et al.   ACS Applied Materials & Interfaces

Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films

(2011) Jill Guyonnet et al.   ADVANCED MATERIALS

Resistance switching memories are memristors

(2011) Leon Chua   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Photovoltaic property of BiFeO3 thin films with 109° domains

(2011) Rui Guo et al.   APPLIED PHYSICS LETTERS

An overview of resistive random access memory devices

(2011) YingTao Li et al.   CHINESE SCIENCE BULLETIN

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

(2011) Y. W. Yin et al.   JOURNAL OF APPLIED PHYSICS

Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO3

(2011) Peter Maksymovych et al.   NANO LETTERS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

(2011) Kyungah Seo et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

(2011) Ioan Mihai Miron et al.   NATURE

Solid-state memories based on ferroelectric tunnel junctions

(2011) André Chanthbouala et al.   Nature Nanotechnology

Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

(2011) A. Chanthbouala et al.   Nature Physics

Giant Tunneling Electroresistance Effect Driven by an Electrically Controlled Spin Valve at a Complex Oxide Interface

(2011) J. D. Burton et al.   PHYSICAL REVIEW LETTERS

Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

(2010) Michael Hambe et al.   ADVANCED FUNCTIONAL MATERIALS

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

(2010) Kuk-Hwan Kim et al.   APPLIED PHYSICS LETTERS

Above-bandgap voltages from ferroelectric photovoltaic devices

(2010) S. Y. Yang et al.   Nature Nanotechnology

Effect of spin-dependent screening on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions

(2010) M. Ye. Zhuravlev et al.   PHYSICAL REVIEW B

Electroresistance effects in ferroelectric tunnel barriers

(2010) D. Pantel et al.   PHYSICAL REVIEW B

Anomalous Hall effect

(2010) Naoto Nagaosa et al.   REVIEWS OF MODERN PHYSICS

Ferroelectric Control of Spin Polarization

(2010) V. Garcia et al.   SCIENCE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Tunneling electroresistance in ferroelectric tunnel junctions with a composite barrier

(2009) M. Ye. Zhuravlev et al.   APPLIED PHYSICS LETTERS

Synthesis and size-dependent crystallization of colloidal germanium telluridenanoparticles

(2009) Marissa A. Caldwell et al.   JOURNAL OF MATERIALS CHEMISTRY

Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale

(2009) A. Gruverman et al.   NANO LETTERS

Giant tunnel electroresistance for non-destructive readout of ferroelectric states

(2009) V. Garcia et al.   NATURE

Conduction at domain walls in oxide multiferroics

(2009) J. Seidel et al.   NATURE MATERIALS

Erratum: Giant Electroresistance in Ferroelectric Tunnel Junctions [Phys. Rev. Lett.94, 246802 (2005)]

(2009) M. Ye. Zhuravlev et al.   PHYSICAL REVIEW LETTERS

Polarization Control of Electron Tunneling into Ferroelectric Surfaces

(2009) P. Maksymovych et al.   SCIENCE

Fast phase transitions induced by picosecond electrical pulses on phase change memory cells

(2008) W. J. Wang et al.   APPLIED PHYSICS LETTERS

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

(2008) S. Ikeda et al.   APPLIED PHYSICS LETTERS

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

(2008) Sung Hyun Jo et al.   NANO LETTERS

Magnetic Tunnel Junctions with Ferroelectric Barriers: Prediction of Four Resistance States from First Principles

(2008) Julian P. Velev et al.   NANO LETTERS

Single-Shot Time-Resolved Measurements of Nanosecond-Scale Spin-Transfer Induced Switching: Stochastic Versus Deterministic Aspects

(2008) T. Devolder et al.   PHYSICAL REVIEW LETTERS