900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Published 2017 View Full Article

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Title
900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 12, Pages 1704-1707
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-10-12
DOI
10.1109/led.2017.2761911

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