Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 12, Pages 1758-1761Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.3029619
Keywords
Gallium nitride; Switches; Schottky diodes; Schottky barriers; Etching; Doping; Voltage measurement; Gallium nitride; power semiconductor devices; super junction; schottky barrier diode; dynamic on-resistance
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Funding
- U.S. Department of Energy Advanced Research Projects Agency-Energy [DE-AR0001008]
- AFOSR [FA9550-19-1-0349]
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This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN. This device structure enabled scaling of breakdown voltage to over 3 kV, and dynamic switching up to 2.8 kV without using any field-plate.
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