Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

Enhance the efficiency of green-yellow LED by optimizing the growth condition of preparation layer

(2020) Xudong Yang et al.   SUPERLATTICES AND MICROSTRUCTURES

Efficient emission of InGaN-based light-emitting diodes: toward orange and red

(2020) Shengnan Zhang et al.   Photonics Research

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

(2020) Pierre Ruterana et al.   JOURNAL OF APPLIED PHYSICS

Highly efficient GaN-based high-power flip-chip light-emitting diodes

(2019) Shengjun Zhou et al.   OPTICS EXPRESS

Zigzag-shaped quantum well engineering of green light-emitting diode

(2019) Muhammad Usman et al.   SUPERLATTICES AND MICROSTRUCTURES

Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array

(2019) Hongpo Hu et al.   Nano Energy

The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

(2018) Shengjun Zhou et al.   Scientific Reports

Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode

(2018) Muhammad Usman et al.   Applied Sciences-Basel

High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes

(2018) Shengjun Zhou et al.   APPLIED SURFACE SCIENCE

Fully-integrated active matrix programmable UV and blue micro-LED display system-on-panel (SoP)

(2017) Ke Zhang et al.   Journal of the Society for Information Display

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

(2017) Theodore D Moustakas et al.   REPORTS ON PROGRESS IN PHYSICS

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

(2017) Hongpo Hu et al.   Scientific Reports

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

(2015) S. Hammersley et al.   APPLIED PHYSICS LETTERS

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

(2015) Hyun Jeong et al.   Scientific Reports

High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

(2014) Chiao-Yun Chang et al.   APPLIED PHYSICS LETTERS

Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes

(2014) Yujue Yang et al.   JOURNAL OF LUMINESCENCE

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

(2013) Steven P. DenBaars et al.   ACTA MATERIALIA

Band gap engineering approaches to increase InGaN/GaN LED efficiency

(2012) M. Auf der Maur et al.   OPTICAL AND QUANTUM ELECTRONICS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Cascade single-chip phosphor-free white light-emitting diodes

(2008) X. Guo et al.   APPLIED PHYSICS LETTERS

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

(2008) Ronald A Arif et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS