Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Strain relaxation of InGaN/GaN multi-quantum well light emitters via nanopatterning

(2019) Ryan Ley et al.   OPTICS EXPRESS

Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary

(2018) Siqian Li et al.   ACS Applied Materials & Interfaces

Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

(2017) Syed Ahmed Al Muyeed et al.   AIP Advances

Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures

(2016) J. Smalc-Koziorowska et al.   APPLIED PHYSICS LETTERS

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

(2015) Thi Huong Ngo et al.   APPLIED PHYSICS LETTERS

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

(2015) K. Lekhal et al.   APPLIED PHYSICS LETTERS

On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

(2015) D.D. Koleske et al.   JOURNAL OF CRYSTAL GROWTH

Polarization engineering ofc-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers

(2015) Silvio Neugebauer et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Development of InGaN-based red LED grown on (0001) polar surface

(2014) Jong-Il Hwang et al.   Applied Physics Express

InGaN based green laser diodes on semipolar GaN substrate

(2014) Masahiro Adachi   JAPANESE JOURNAL OF APPLIED PHYSICS

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

(2012) F. C.-P. Massabuau et al.   APPLIED PHYSICS LETTERS

Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate

(2012) Tomonari Shioda et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

(2011) F. Y. Meng et al.   JOURNAL OF APPLIED PHYSICS

True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

(2010) Adrian Avramescu et al.   Applied Physics Express

Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

(2010) Mingwei Zhu et al.   PHYSICAL REVIEW B

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

(2008) P. K. Kandaswamy et al.   JOURNAL OF APPLIED PHYSICS

The critical thickness of InGaN on (0001)GaN

(2008) M. Leyer et al.   JOURNAL OF CRYSTAL GROWTH