High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes

(2013) R. Vaxenburg et al.   APPLIED PHYSICS LETTERS

Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

(2013) Z. G. Ju et al.   APPLIED PHYSICS LETTERS

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

(2011) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Inverted Octagonal Surface Defects in a-Plane AlGaN/GaN Multiple Quantum Wells

(2011) Huei-min Huang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

(2010) Shih-Chun Ling et al.   APPLIED PHYSICS LETTERS

Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate

(2010) Shih-Pang Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN

(2009) X. Ni et al.   APPLIED PHYSICS LETTERS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

(2009) Kenneth J. Vampola et al.   APPLIED PHYSICS LETTERS

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS