Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode

Electromechanical Fields and Their Influence on the Internal Quantum Efficiency of GaN-Based Light-Emitting Diodes

(2018) Muhammad Usman et al.   ACTA MECHANICA SOLIDA SINICA

Improving radiative recombination efficiency of green light-emitting diodes

(2018) Boning Ding   MATERIALS SCIENCE AND TECHNOLOGY

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

(2018) Muhammad Usman et al.   SUPERLATTICES AND MICROSTRUCTURES

Experimental and numerical analysis of the indium-content on the internal electromechanical field in GaN-based light-emitting diodes

(2018) Usman Muhammad et al.   OPTIK

Improved optoelectronic performance of green light-emitting diodes by employing GaAlInN quantum wells without electron blocking layer

(2018) Muhammad Usman et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness

(2015) W. Liu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

The efficiency challenge of nitride light-emitting diodes for lighting

(2015) Claude Weisbuch et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

(2014) Chiao-Yun Chang et al.   APPLIED PHYSICS LETTERS

Measurement of piezoelectric field in single- and double-quantum-well green LEDs using electroreflectance spectroscopy

(2014) Muhammad Usman et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer

(2013) Junjie Kang et al.   APPLIED PHYSICS LETTERS

Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes

(2013) R. Vaxenburg et al.   APPLIED PHYSICS LETTERS

Numerical Study of Enhanced Performance in InGaN Light-Emitting Diodes with Graded-composition AlGaInN Barriers

(2013) Su Jin Kim et al.   Journal of the Optical Society of Korea

Efficiency droop in light-emitting diodes: Challenges and countermeasures

(2013) Jaehee Cho et al.   Laser & Photonics Reviews

Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier

(2013) Jian-Yong Xiong et al.   OPTICS COMMUNICATIONS

Advantage of InGaN-based light-emitting diodes using AlGaInN electron blocking layer coupled with inserting InGaN layer

(2013) Tian-Hu Wang et al.   OPTIK

Advantages of blue InGaN light-emitting diodes with composition-graded barriers and electron-blocking layer

(2013) Jih-Yuan Chang et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells

(2013) Li-Hong Zhu et al.   IEEE Photonics Journal

The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

(2012) Roy B. Chung et al.   APPLIED PHYSICS LETTERS

Band gap engineering approaches to increase InGaN/GaN LED efficiency

(2012) M. Auf der Maur et al.   OPTICAL AND QUANTUM ELECTRONICS

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

(2012) R M Farrell et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

(2010) Shih-Chun Ling et al.   APPLIED PHYSICS LETTERS

Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells

(2010) Sang-Heon Han et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

(2010) Yen-Kuang Kuo et al.   OPTICS LETTERS

Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

(2009) Hongping Zhao et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

(2009) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm

(2008) Ronald A. Arif et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE