High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes

Published 2018 View Full Article

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Title
High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
Authors
Keywords
GaN, UV LEDs, Isoelectronic doping, TEM, Threading dislocation, SIMS
Journal
APPLIED SURFACE SCIENCE
Volume 471, Issue -, Pages 231-238
Publisher
Elsevier BV
Online
2018-12-04
DOI
10.1016/j.apsusc.2018.12.011

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