Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 4, Pages 5106-5112Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b20077
Keywords
GaS; MoS2; transistor; heterostructure; low-frequency noise; logic operation
Funding
- Creative Materials Discovery Program through the National Research Foundation (NRF) of Korea [2016M3D1A1900035]
- Global Frontier Research Center for Advanced Soft Electronics through the National Research Foundation (NRF) of Korea [2011-0031640]
- National Research Foundation of Korea [IBS-R014-D1-2020-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals heterostructure, MoS2 channel, and GaS gate insulator. The transistor exhibits a subthreshold swing of 63 mV/dec, an on/off ratio over 10(6) within a gate voltage of 0.4 V, and peak mobility of 83 cm(2)/(V s) at room temperature. The low-frequency noise characteristics were investigated and described by the Hooge mobility fluctuation model. The results suggest that the van der Waals heterostructure of 2D semiconductors can produce a high-performing interface without dangling bonds and defects caused by lattice mismatch. Furthermore, a logic inverter and a NAND gate are demonstrated, with an inverter voltage gain of 14.5, which is higher than previously reported by MoS2-based transistors with oxide dielectrics. Therefore, this transistor based on van der Waals heterostructure exhibits considerable potential in digital logic applications with low-power integrated circuits.
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