A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming

A Dual-Channel Ferroelectric-Gate Field-Effect Transistor Enabling nand -Type Memory Characteristics

(2011) Yukihiro Kaneko et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure

(2011) Yukihiro Kaneko et al.   JOURNAL OF APPLIED PHYSICS

Actual information storage with a recording density of 4 Tbit/in.2 in a ferroelectric recording medium

(2010) Kenkou Tanaka et al.   APPLIED PHYSICS LETTERS

Fabrication and characterization of sub-0.6-µm ferroelectric-gate field-effect transistors

(2010) Le Van Hai et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

NOR-Type Nonvolatile Ferroelectric-Gate Memory Cell Using Composite Oxide Technology

(2009) Yukihiro Kaneko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3Heterostructure Formed on a Silicon Substrate

(2008) Hiroyuki Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Scanning Nonlinear Dielectric Microscopy Nano-Science and Technology for Next Generation High Density Ferroelectric Data Storage

(2008) Kenkou Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology

(2008) Yoshihisa Kato et al.   JAPANESE JOURNAL OF APPLIED PHYSICS