GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

(2008) A. Vardi et al.   APPLIED PHYSICS LETTERS

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

(2008) L. Nevou et al.   APPLIED PHYSICS LETTERS

High frequency measurements on an AlN∕GaN-based intersubband detector at 1550 and 780nm

(2008) D. Hofstetter et al.   APPLIED PHYSICS LETTERS

Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m

(2008) S. Valdueza-Felip et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells

(2008) N. Kheirodin et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B