Polarization engineering ofc-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers

Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers

(2013) A. Dadgar et al.   APPLIED PHYSICS LETTERS

Room temperature excitonic recombination in GaInN/GaN quantum wells

(2013) Torsten Langer et al.   APPLIED PHYSICS LETTERS

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

(2012) Benjamin Reuters et al.   JOURNAL OF APPLIED PHYSICS

Growth Studies on Quaternary AlInGaN Layers for HEMT Application

(2012) Benjamin Reuters et al.   JOURNAL OF ELECTRONIC MATERIALS

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

(2011) Yi-Keng Fu et al.   APPLIED PHYSICS LETTERS

Characterization of AlGaInN layers using X-ray diffraction and fluorescence

(2011) Lars Groh et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11$\overline {2} $2) and (10$\overline {1} $1) pyramid facets

(2011) Sebastian Metzner et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

(2010) M. Jetter et al.   JOURNAL OF CRYSTAL GROWTH

Prospects for LED lighting

(2009) Siddha Pimputkar et al.   Nature Photonics

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS