Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
出版年份 2020 全文链接
标题
Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 128, Issue 22, Pages 223102
出版商
AIP Publishing
发表日期
2020-12-08
DOI
10.1063/5.0027119
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Strain relaxation of InGaN/GaN multi-quantum well light emitters via nanopatterning
- (2019) Ryan Ley et al. OPTICS EXPRESS
- Polarity Control within One Monolayer at ZnO/GaN Heterointerface: (0001) Plane Inversion Domain Boundary
- (2018) Siqian Li et al. ACS Applied Materials & Interfaces
- Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
- (2017) Syed Ahmed Al Muyeed et al. AIP Advances
- Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures
- (2016) J. Smalc-Koziorowska et al. APPLIED PHYSICS LETTERS
- Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
- (2015) Thi Huong Ngo et al. APPLIED PHYSICS LETTERS
- Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
- (2015) K. Lekhal et al. APPLIED PHYSICS LETTERS
- On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers
- (2015) D.D. Koleske et al. JOURNAL OF CRYSTAL GROWTH
- Polarization engineering ofc-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers
- (2015) Silvio Neugebauer et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Development of InGaN-based red LED grown on (0001) polar surface
- (2014) Jong-Il Hwang et al. Applied Physics Express
- InGaN based green laser diodes on semipolar GaN substrate
- (2014) Masahiro Adachi JAPANESE JOURNAL OF APPLIED PHYSICS
- Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
- (2012) F. C.-P. Massabuau et al. APPLIED PHYSICS LETTERS
- Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate
- (2012) Tomonari Shioda et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN
- (2011) F. Y. Meng et al. JOURNAL OF APPLIED PHYSICS
- True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN
- (2010) Adrian Avramescu et al. Applied Physics Express
- Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes
- (2010) Mingwei Zhu et al. PHYSICAL REVIEW B
- Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
- (2008) Hongping Zhao et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
- (2008) P. K. Kandaswamy et al. JOURNAL OF APPLIED PHYSICS
- The critical thickness of InGaN on (0001)GaN
- (2008) M. Leyer et al. JOURNAL OF CRYSTAL GROWTH
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