Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

(2015) C. Bazioti et al.   JOURNAL OF APPLIED PHYSICS

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

(2014) Robert Czernecki et al.   JOURNAL OF CRYSTAL GROWTH

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

(2014) C Skierbiszewski et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer

(2012) P. F. Yan et al.   JOURNAL OF APPLIED PHYSICS

The role of extended defects on the performance of optoelectronic devices in nitride semiconductors

(2012) Theodore D. Moustakas   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

InGaN Laser Diode Mini-Arrays

(2011) Piotr Perlin et al.   Applied Physics Express

Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

(2011) F. Y. Meng et al.   JOURNAL OF APPLIED PHYSICS

Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

(2011) Y. Kotsar et al.   JOURNAL OF APPLIED PHYSICS

Phase separation and atomic ordering in InxAlyGa1−x−yN layers

(2008) F.Y. Meng et al.   ACTA MATERIALIA