High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Dislocation-Induced Nanoparticle Decoration on a GaN Nanowire

(2015) Bing Yang et al.   ACS Applied Materials & Interfaces

Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique

(2015) X. Zhang et al.   CRYSTENGCOMM

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

(2015) Guoqiang Li et al.   SURFACE SCIENCE REPORTS

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

(2015) Wenliang Wang et al.   Scientific Reports

Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth

(2015) Yunhao Lin et al.   Journal of Materials Chemistry C

Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer

(2014) Yuxia Feng et al.   CRYSTENGCOMM

Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN

(2014) Xiaotong Liu et al.   CRYSTENGCOMM

Effect of multiple AlN layers on quality of GaN films grown on Si substrates

(2014) Binh Tinh Tran et al.   Electronic Materials Letters

High quality crack-free GaN film grown on si (1 1 1) substrate without AlN interlayer

(2014) Dan-Wei Li et al.   JOURNAL OF CRYSTAL GROWTH

Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD

(2013) S. J. Bak et al.   Electronic Materials Letters

Prospects of III-nitride optoelectronics grown on Si

(2013) D Zhu et al.   REPORTS ON PROGRESS IN PHYSICS

InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers

(2012) Adam H. Blake et al.   JOURNAL OF APPLIED PHYSICS

Radiation effects in GaN materials and devices

(2012) Alexander Y. Polyakov et al.   Journal of Materials Chemistry C

The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate

(2010) Jianxing Cao et al.   JOURNAL OF CRYSTAL GROWTH

MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer

(2009) William E. Fenwick et al.   JOURNAL OF CRYSTAL GROWTH

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

High quality AlN grown on SiC by metal organic chemical vapor deposition

(2008) Z. Chen et al.   APPLIED PHYSICS LETTERS

Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

(2008) Engin Arslan et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

(2008) Weijun Luo et al.   MICROELECTRONICS JOURNAL