Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer

Published 2014 View Full Article

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Title
Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer
Authors
Keywords
-
Journal
CRYSTENGCOMM
Volume 16, Issue 32, Pages 7525
Publisher
Royal Society of Chemistry (RSC)
Online
2014-06-17
DOI
10.1039/c4ce01164c
References
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