Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique

Title
Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique
Authors
Keywords
-
Journal
CRYSTENGCOMM
Volume 17, Issue 39, Pages 7496-7499
Publisher
Royal Society of Chemistry (RSC)
Online
2015-08-12
DOI
10.1039/c5ce01159k

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