High quality crack-free GaN film grown on si (1 1 1) substrate without AlN interlayer

Title
High quality crack-free GaN film grown on si (1 1 1) substrate without AlN interlayer
Authors
Keywords
-
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 407, Issue -, Pages 58-62
Publisher
Elsevier BV
Online
2014-09-16
DOI
10.1016/j.jcrysgro.2014.08.025

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