Prospects of III-nitride optoelectronics grown on Si

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

(2012) Kai Cheng et al.   Applied Physics Express

Structure and chemistry of the Si(111)/AlN interface

(2012) G. Radtke et al.   APPLIED PHYSICS LETTERS

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

(2012) S. Hammersley et al.   JOURNAL OF APPLIED PHYSICS

Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping

(2011) Armin Dadgar et al.   Applied Physics Express

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

The effects of Si doping on dislocation movement and tensile stress in GaN films

(2011) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection

(2011) Elison Matioli et al.   JOURNAL OF APPLIED PHYSICS

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

(2011) Dandan Zhu et al.   JOURNAL OF APPLIED PHYSICS

Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

(2011) H.-s. Kim et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

(2010) G. Radtke et al.   APPLIED PHYSICS LETTERS

Semipolar single component GaN on planar high index Si(11h) substrates

(2010) Roghaiyeh Ravash et al.   APPLIED PHYSICS LETTERS

Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+Ion Implantation

(2010) Bumjoon Kim et al.   CHEMICAL VAPOR DEPOSITION

Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

(2010) JaeWon Lee et al.   JOURNAL OF CRYSTAL GROWTH

Microstructural origins of localization in InGaN quantum wells

(2010) R A Oliver et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates

(2009) Y. Yang et al.   APPLIED PHYSICS LETTERS

Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer

(2009) William E. Fenwick et al.   APPLIED PHYSICS LETTERS

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

(2009) Jiuru Xu et al.   APPLIED PHYSICS LETTERS

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

(2009) S.L. Selvaraj et al.   IEEE ELECTRON DEVICE LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method

(2009) C. F. Johnston et al.   JOURNAL OF APPLIED PHYSICS

One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy

(2009) Daisuke Iida et al.   JOURNAL OF CRYSTAL GROWTH

Growth and properties of semi-polar GaN on a patterned silicon substrate

(2009) Nobuhiko Sawaki et al.   JOURNAL OF CRYSTAL GROWTH

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth

(2009) J.H. Yang et al.   THIN SOLID FILMS

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

(2008) Engin Arslan et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

(2008) Kai Cheng et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate

(2008) Seung-Jae Lee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

(2008) J.E. Ayers   JOURNAL OF ELECTRONIC MATERIALS

Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates

(2008) Kenneth J. Vampola et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE