Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD
Authors
Keywords
-
Journal
MICROELECTRONICS JOURNAL
Volume 39, Issue 12, Pages 1710-1713
Publisher
Elsevier BV
Online
2008-03-19
DOI
10.1016/j.mejo.2008.01.042

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.