Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current

Published 2018 View Full Article

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Title
Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 17, Issue 4, Pages 824-828
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-07-26
DOI
10.1109/tnano.2018.2842071

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