High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm

(2017) Hong Zhou et al.   IEEE ELECTRON DEVICE LETTERS

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

(2017) Ivan S. Esqueda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor

(2016) M. Syamsul et al.   APPLIED PHYSICS LETTERS

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

(2016) Shihyun Ahn et al.   APPLIED PHYSICS LETTERS

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

(2016) Chuan-Wei Tsou et al.   IEEE ELECTRON DEVICE LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

(2015) Toshiyuki Oishi et al.   Applied Physics Express

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

(2015) Mingda Zhu et al.   IEEE ELECTRON DEVICE LETTERS

The impact of defect scattering on the quasi-ballistic transport of nanoscale conductors

(2015) I. S. Esqueda et al.   JOURNAL OF APPLIED PHYSICS

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

(2015) Ashish V. Penumatcha et al.   Nature Communications

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

(2014) Hisashi Murakami et al.   Applied Physics Express

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

(2014) Hitoshi Umezawa et al.   IEEE ELECTRON DEVICE LETTERS

Charge trapping in aligned single-walled carbon nanotube arrays induced by ionizing radiation exposure

(2014) Ivan S. Esqueda et al.   JOURNAL OF APPLIED PHYSICS

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

(2012) H. Yang et al.   SCIENCE

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Czochralski growth and characterization of β-Ga2O3 single crystals

(2010) Z. Galazka et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS

Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

(2008) Daisuke Shinohara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS