Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3

(2019) Yuewei Zhang et al.   Applied Physics Express

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

(2018) Man Hoi Wong et al.   Applied Physics Express

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Trapping Effects in Si $\delta$ -Doped $\beta$ -Ga2O3 MESFETs on an Fe-Doped $\beta$ -Ga2O3 Substrate

(2018) Joe F. Mcglone et al.   IEEE ELECTRON DEVICE LETTERS

n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy

(2018) Sang-Heon Han et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors

(2018) Chandan Joishi et al.   APPLIED PHYSICS LETTERS

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

(2018) Yuewei Zhang et al.   APL Materials

Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement

(2017) Krishnendu Ghosh et al.   JOURNAL OF MATERIALS RESEARCH

Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction

(2016) Yuichi Oshima et al.   Applied Physics Express

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

(2016) E. C. Young et al.   APPLIED PHYSICS LETTERS

Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga 2 O 3 Layers Grown by MOVPE on (010)-Oriented Substrates

(2016) Michele Baldini et al.   ECS Journal of Solid State Science and Technology

Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

(2015) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

(2014) Hironori Okumura et al.   Applied Physics Express

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

MBE grown Ga2O3 and its power device applications

(2013) Kohei Sasaki et al.   JOURNAL OF CRYSTAL GROWTH

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates

(2008) Takayoshi Oshima et al.   Applied Physics Express