High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer
出版年份 2020 全文链接
标题
High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer
作者
关键词
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出版物
JOURNAL OF APPLIED PHYSICS
Volume 127, Issue 21, Pages 215706
出版商
AIP Publishing
发表日期
2020-06-04
DOI
10.1063/5.0005531
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