High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

The edge-terminated Au/Ni/-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50keV and dose of 5x10(14)cm(-2) and 1x10(16)cm(-2), the reverse breakdown voltage increases from 209 to 252 and 451V (the maximum up to 550V) and the Baliga figure-of-merit (V-BR(2)/R-on) also increases from 25.7 to 30.2 and 61.6MWcm(-2), about 17.5% and 140% enhancement, respectively. According to the 2D simulation, the electric fields at the junction corner are smoothed out after argon implantation and the position of the maximum breakdown electric filed, 5.05MV/cm, changes from the anode corner at the interface to the overlap corner just under the implantation region. The temperature dependence of the forward characteristics was also investigated.