Octonary Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3Multiferroic Tunnel Junctions

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

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Coexistence of four resistance states and exchange bias in La0.6Sr0.4MnO3/BiFeO3/La0.6Sr0.4MnO3 multiferroic tunnel junction

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Reversible electric-field control of magnetization at oxide interfaces

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Ferroelectric tunnel junctions for information storage and processing

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Giant Electroresistance of Super-tetragonal BiFeO3-Based Ferroelectric Tunnel Junctions

(2013) Hiroyuki Yamada et al.   ACS Nano

Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions

(2013) Taehee Yoo et al.   APPLIED PHYSICS LETTERS

Enhanced tunnelling electroresistance effect due to a ferroelectrically induced phase transition at a magnetic complex oxide interface

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A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States

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Multi-Valued Planar Hall Resistance Manipulated by Current Induced Magnetic Field in Fe Films Grown on GaAs(001) Substrates

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Multi-state resistive switching memory with secure information storage in Au/BiFe0.95Mn0.05O3/La5/8Ca3/8MnO3 heterostructure

(2012) Y. P. Yao et al.   APPLIED PHYSICS LETTERS

Ferroelectric and multiferroic tunnel junctions

(2012) E.Y. Tsymbal et al.   MRS BULLETIN

Ferroelectric Tunnel Memristor

(2012) D. J. Kim et al.   NANO LETTERS

A ferroelectric memristor

(2012) André Chanthbouala et al.   NATURE MATERIALS

Reversible electrical switching of spin polarization in multiferroic tunnel junctions

(2012) D. Pantel et al.   NATURE MATERIALS

Multiferroic tunnel junctions

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Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

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Publisher’s Note: “Tailoring magnetic anisotropy in epitaxial half metallic La0.7Sr0.3MnO3 thin films” [J. Appl. Phys. 110, 013919 (2011)]

(2011) P. Perna et al.   JOURNAL OF APPLIED PHYSICS

Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctions

(2011) Y. W. Yin et al.   JOURNAL OF APPLIED PHYSICS

Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

(2010) Michael Hambe et al.   ADVANCED FUNCTIONAL MATERIALS

Magnetic anisotropy and magnetization reversal of La0.67Sr0.33MnO3 thin films on SrTiO3(110)

(2010) Hans Boschker et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectric Control of Spin Polarization

(2010) V. Garcia et al.   SCIENCE

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

(2009) Taehee Yoo et al.   APPLIED PHYSICS LETTERS

Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors

(2008) H. Kohlstedt et al.   APPLIED PHYSICS LETTERS