Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities

Influence of asymmetry on bias behavior of spin torque

(2010) Y.-H. Tang et al.   PHYSICAL REVIEW B

Rapid Domain Wall Motion in Permalloy Nanowires Excited by a Spin-Polarized Current Applied Perpendicular to the Nanowire

(2010) C. T. Boone et al.   PHYSICAL REVIEW LETTERS

Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion

(2009) Xiaobin Wang et al.   IEEE ELECTRON DEVICE LETTERS

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

(2009) Se-Chung Oh et al.   Nature Physics

Bias and angular dependence of spin-transfer torque in magnetic tunnel junctions

(2009) C. Wang et al.   PHYSICAL REVIEW B

High Domain Wall Velocities due to Spin Currents Perpendicular to the Plane

(2009) A. V. Khvalkovskiy et al.   PHYSICAL REVIEW LETTERS

Single Shot Detection of the Magnetic Domain Wall Motion by Using Tunnel Magnetoresistance Effect

(2008) Kouta Kondou et al.   Applied Physics Express

Demonstration of multilevel cell spin transfer switching in MgO magnetic tunnel junctions

(2008) Xiaohua Lou et al.   APPLIED PHYSICS LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Magnetic Domain-Wall Racetrack Memory

(2008) S. S. P. Parkin et al.   SCIENCE