All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
出版年份 2019 全文链接
标题
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
作者
关键词
-
出版物
Nature Communications
Volume 10, Issue 1, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2019-11-15
DOI
10.1038/s41467-019-13176-4
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Quantum engineering of transistors based on 2D materials heterostructures
- (2018) Giuseppe Iannaccone et al. Nature Nanotechnology
- Electric-field induced structural transition in vertical MoTe2- and Mo1–xWxTe2-based resistive memories
- (2018) Feng Zhang et al. NATURE MATERIALS
- Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays
- (2017) Haitong Li et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
- (2017) Ruijing Ge et al. NANO LETTERS
- High-performance multilayer WSe2 field-effect transistors with carrier type control
- (2017) Pushpa Raj Pudasaini et al. Nano Research
- Scalable exfoliation and dispersion of two-dimensional materials – an update
- (2017) Hengcong Tao et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer
- (2017) Xiaolong Zhao et al. Small
- Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory
- (2017) Xiaobing Yan et al. Journal of Materials Chemistry C
- High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions
- (2016) Bilu Liu et al. ACS Nano
- Layer Control of WSe2 via Selective Surface Layer Oxidation
- (2016) Zhen Li et al. ACS Nano
- Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications
- (2016) Kai Qian et al. ADVANCED FUNCTIONAL MATERIALS
- Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
- (2016) Chunxue Hao et al. ADVANCED FUNCTIONAL MATERIALS
- Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory
- (2016) Donghee Son et al. ADVANCED MATERIALS
- Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits
- (2016) Peng Huang et al. ADVANCED MATERIALS
- Ultra-Low Switching Voltage Induced by Inserting SiO2Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory
- (2016) Chih-Cheng Shih et al. IEEE ELECTRON DEVICE LETTERS
- SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds
- (2016) Fernando Garcia-Redondo et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
- (2016) Hsun-Jen Chuang et al. NANO LETTERS
- Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts
- (2016) Mahito Yamamoto et al. NANO LETTERS
- Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays
- (2016) Qing Luo et al. Nanoscale
- Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices
- (2016) Thomas Breuer et al. Scientific Reports
- Polarity control in WSe2 double-gate transistors
- (2016) Giovanni V. Resta et al. Scientific Reports
- High-Performance, Air-Stable, Top-Gate, p-Channel WSe2Field-Effect Transistor with Fluoropolymer Buffer Layer
- (2015) Seyed Hossein Hosseini Shokouh et al. ADVANCED FUNCTIONAL MATERIALS
- Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials
- (2015) Chaoliang Tan et al. CHEMICAL SOCIETY REVIEWS
- Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices
- (2015) Tsung-Ling Tsai et al. IEEE ELECTRON DEVICE LETTERS
- Compact One-Transistor-N-RRAM Array Architecture for Advanced CMOS Technology
- (2015) Chih-Wei Stanley Yeh et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI
- (2015) Wei Cao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design
- (2015) Pai-Yu Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2
- (2015) Seunghyun Lee et al. NANO LETTERS
- Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates
- (2015) Yingnan Liu et al. NANO LETTERS
- Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
- (2015) Mahito Yamamoto et al. NANO LETTERS
- Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
- (2015) Peifu Cheng et al. NANO LETTERS
- Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
- (2015) Vinod K. Sangwan et al. Nature Nanotechnology
- Metal oxide-resistive memory using graphene-edge electrodes
- (2015) Seunghyun Lee et al. Nature Communications
- Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors
- (2015) N. R. Pradhan et al. Scientific Reports
- Field-Effect Transistors Built from All Two-Dimensional Material Components
- (2014) Tania Roy et al. ACS Nano
- High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors
- (2014) Saptarshi Das et al. APPLIED PHYSICS LETTERS
- Benchmarking Transition Metal Dichalcogenide MOSFET in the Ultimate Physical Scaling Limit
- (2014) Kausik Majumdar et al. IEEE ELECTRON DEVICE LETTERS
- Crossbar RRAM Arrays: Selector Device Requirements During Read Operation
- (2014) Jiantao Zhou et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Performance and reliability trade-offs for high-κ RRAM
- (2014) Nagarajan Raghavan MICROELECTRONICS RELIABILITY
- High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
- (2014) Hsun-Jen Chuang et al. NANO LETTERS
- Layered memristive and memcapacitive switches for printable electronics
- (2014) Alexander A. Bessonov et al. NATURE MATERIALS
- Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
- (2014) Rajesh Kappera et al. NATURE MATERIALS
- Two-dimensional flexible nanoelectronics
- (2014) Deji Akinwande et al. Nature Communications
- Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
- (2014) Andres Castellanos-Gomez et al. 2D Materials
- Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
- (2013) Wei Liu et al. NANO LETTERS
- Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications
- (2012) Jens Meyer et al. ADVANCED MATERIALS
- Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors
- (2012) Dmitri B. Strukov et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Laser-Thinning of MoS2: On Demand Generation of a Single-Layer Semiconductor
- (2012) A. Castellanos-Gomez et al. NANO LETTERS
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- Low Reset Current in Stacked $\hbox{AlO}_{x}/ \hbox{WO}_{x}$ Resistive Switching Memory
- (2011) Y. L. Song et al. IEEE ELECTRON DEVICE LETTERS
- Ultrafast Transfer of Metal-Enhanced Carbon Nanotubes at Low Temperature for Large-Scale Electronics Assembly
- (2010) Yifeng Fu et al. ADVANCED MATERIALS
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