Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 10, Pages 1276-1279Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2599218
Keywords
ITO; RRAM; oxygen concentration gradient; conduction current fitting
Categories
Funding
- Ministry of Science and Technology, Taiwan [MOST-103-2112-M-110-011-MY3]
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A lower switching voltage of indium-tinoxide (ITO)-based resistance random access memory (RRAM) with an inserted SiO2 thin film was presented. The amplitude of switching voltage of device was below 0.2 V whether measured by direct current or alternating current sweep operation. Notably, the observed reset voltage increased with temperature. To clarify the switching mechanism, conduction current fitting and switching voltage statistics were applied to explore the regular voltage variation dependent on temperature. In addition, a reaction model was proposed to explain the oxygen concentration gradient induced between the inserted SiO2 and ITO electrode on the ITO-based RRAM device.
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