Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance

Published 2018 View Full Article

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Title
Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the device performance
Authors
Keywords
RRAM, Nitrogen doping, Multilevel storage, Oxygen vacancy, First-principle method
Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 775, Issue -, Pages 1301-1306
Publisher
Elsevier BV
Online
2018-10-23
DOI
10.1016/j.jallcom.2018.10.249

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