Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

Published 2016 View Full Article

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Title
Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices
Authors
Keywords
Resistive switching, Irreversible transition, Memory device, Co-existence
Journal
MICROELECTRONIC ENGINEERING
Volume 159, Issue -, Pages 190-197
Publisher
Elsevier BV
Online
2016-04-04
DOI
10.1016/j.mee.2016.03.043

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