SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

Comparative study of Al2 O3 , HfO2 , and HfAlO x for improved self-compliance bipolar resistive switching

(2017) Andrey S. Sokolov et al.   JOURNAL OF THE AMERICAN CERAMIC SOCIETY

Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si

(2016) Muxi Yu et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

(2015) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

“Zero-charge” SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition

(2015) B.W.H. van de Loo et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

(2015) Lai-Guo Wang et al.   Nanoscale Research Letters

Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

(2015) Rajeswar Panja et al.   Nanoscale Research Letters

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

(2014) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Uniform bipolar resistive switching properties with self-compliance effect of Pt/TiO2/p-Si devices

(2014) Lilan Zou et al.   AIP Advances

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Study of conduction and switching mechanisms in Al/AlOx/WOx/W resistive switching memory for multilevel applications

(2013) Ye Zhang et al.   APPLIED PHYSICS LETTERS

Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures

(2013) A. Sleiman et al.   JOURNAL OF APPLIED PHYSICS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

(2012) X. A. Tran et al.   IEEE ELECTRON DEVICE LETTERS

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

(2011) L. Goux et al.   APPLIED PHYSICS LETTERS

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation

(2011) Yi Wu et al.   JOURNAL OF APPLIED PHYSICS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Resistive switching characteristics of multilayered (HfO2/Al2O3)n n=19 thin film

(2011) Wen-Hsien Tzeng et al.   THIN SOLID FILMS

Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

(2010) Hangbing Lv et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

The conical shape filament growth model in unipolar resistance switching of TiO2 thin film

(2009) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

(2009) Xun Cao et al.   JOURNAL OF APPLIED PHYSICS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today