All inorganic solution processed three terminal charge trapping memory device

Ferroelectric-Like Charge Trapping Thin-Film Transistors and Their Evaluation as Memories and Synaptic Devices

(2017) Alwin Daus et al.   Advanced Electronic Materials

All Inorganic Spin-Coated Nanoparticle-Based Capacitive Memory Devices

(2016) Sandip Mondal et al.   IEEE ELECTRON DEVICE LETTERS

Novel Multi-Level Cell TFT Memory With an In–Ga–Zn-O Charge Storage Layer and Channel

(2015) Wen-Peng Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

(2015) Ya Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

(2014) Adrian Chasin et al.   APPLIED PHYSICS LETTERS

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

(2014) Jun Yong Bak et al.   IEEE ELECTRON DEVICE LETTERS

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures

(2014) Jun Yong Bak et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Novel Zn-Doped ${\rm Al}_{2}{\rm O}_{3}$ Charge Storage Medium for Light-Erasable In–Ga–Zn–O TFT Memory

(2013) Sun Chen et al.   IEEE ELECTRON DEVICE LETTERS

Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals

(2013) Xing-Mei Cui et al.   IEEE ELECTRON DEVICE LETTERS

Full-Swing a-IGZO Inverter With a Depletion Load Using Negative Bias Instability Under Light Illumination

(2012) In-Tak Cho et al.   IEEE ELECTRON DEVICE LETTERS

A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory

(2012) Sheng-Hsien Liu et al.   IEEE ELECTRON DEVICE LETTERS

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

(2012) Yong-Hoon Kim et al.   NATURE

SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors

(2011) Eunkyeom Kim et al.   APPLIED PHYSICS LETTERS

Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors

(2011) Kyung Min Kim et al.   APPLIED PHYSICS LETTERS

High-Performance Light-Erasable Memory and Real-Time Ultraviolet Detector Based on Unannealed Indium–Gallium–Zinc–Oxide Thin-Film Transistor

(2011) Wei-Tsung Chen et al.   IEEE ELECTRON DEVICE LETTERS

Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer

(2011) Jaeman Jang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanofloating Gate Memory Devices Based on Controlled Metallic Nanoparticle-Embedded InGaZnO TFTs

(2010) Young-Su Park et al.   IEEE ELECTRON DEVICE LETTERS

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

(2009) Arun Suresh et al.   APPLIED PHYSICS LETTERS

Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory

(2008) Chia-Chieh Chang et al.   APPLIED PHYSICS LETTERS

Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

(2008) Huaxiang Yin et al.   APPLIED PHYSICS LETTERS

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

(2008) Huaxiang Yin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES