Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

Gigahertz Operation of a-IGZO Schottky Diodes

(2013) Adrian Chasin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical characterisation and predictive simulation of defects induced by keV Si+implantation in n-type Si

(2013) C. Nyamhere et al.   JOURNAL OF APPLIED PHYSICS

Electron traps in amorphous In–Ga–Zn–O thin films studied by isothermal capacitance transient spectroscopy

(2012) Kazushi Hayashi et al.   APPLIED PHYSICS LETTERS

High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

(2012) Adrian Chasin et al.   APPLIED PHYSICS LETTERS

Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic $C$– $V$ Measurement

(2012) Hagyoul Bae et al.   IEEE ELECTRON DEVICE LETTERS

Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 $^{\circ}\hbox{C}$ on a Flexible Substrate

(2011) Dong Hee Lee et al.   IEEE ELECTRON DEVICE LETTERS

Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics

(2010) Sangwon Lee et al.   IEEE ELECTRON DEVICE LETTERS

Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors

(2010) Edward Namkyu Cho et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors

(2009) Ken Hoshino et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electronic structural analysis of transparent In2O3–ZnO films by hard X-ray photoelectron spectroscopy

(2009) Tadao Shibuya et al.   THIN SOLID FILMS

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

Trap densities in amorphous-InGaZnO4 thin-film transistors

(2008) Mutsumi Kimura et al.   APPLIED PHYSICS LETTERS

Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

(2008) Kichan Jeon et al.   APPLIED PHYSICS LETTERS