Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

Published 2015 View Full Article

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Title
Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 4, Pages 1184-1188
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-03-03
DOI
10.1109/ted.2015.2402220

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