Novel Zn-Doped ${\rm Al}_{2}{\rm O}_{3}$ Charge Storage Medium for Light-Erasable In–Ga–Zn–O TFT Memory

Authors

Keywords

Journal

Volume 34, Issue 8, Pages 1008-1010

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2013-07-04

DOI

10.1109/led.2013.2266371

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