标题
All inorganic solution processed three terminal charge trapping memory device
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 114, Issue 17, Pages 173502
出版商
AIP Publishing
发表日期
2019-05-01
DOI
10.1063/1.5089743
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Ferroelectric-Like Charge Trapping Thin-Film Transistors and Their Evaluation as Memories and Synaptic Devices
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