Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO 2 inserting layer

Published 2015 View Full Article

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Title
Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO 2 inserting layer
Authors
Keywords
SiO, 2, /a-IGZO bi-layer structure, ReRAM, Low operation power, Multi-level
Journal
CURRENT APPLIED PHYSICS
Volume 15, Issue 4, Pages 441-445
Publisher
Elsevier BV
Online
2015-02-04
DOI
10.1016/j.cap.2015.01.024

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