Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM

Title
Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM
Authors
Keywords
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Journal
ECS Solid State Letters
Volume 4, Issue 7, Pages Q25-Q28
Publisher
The Electrochemical Society
Online
2015-05-06
DOI
10.1149/2.0011507ssl

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