Article
Computer Science, Information Systems
Liang Chen, Huimin Wang, Qianqian Huang, Ru Huang
Summary: In this work, a novel steep-slope negative quantum capacitance field-effect transistor (NQCFET) with MoS2-integrated gate stack was realized. The optimized MoS2-integrated NQCFET demonstrated sub-60 mV/dec subthreshold swing over a current range of 5 decades, with the minimum SS reaching 29 mV/dec, indicating its remarkable potential for ultra-low power applications.
SCIENCE CHINA-INFORMATION SCIENCES
(2023)
Article
Materials Science, Multidisciplinary
Y. G. Xiao, K. C. Kang, L. Y. Tian, K. Xiong, G. Li, M. H. Tang, Z. Li
Summary: This article proposed an interfacial conductivity model for the surface potential and the drain current of NC-FET based on the MIFIS structure, highlighting the significant role of electrical conductivity of the interface layer between electrode and ferroelectric thin film caused by lattice misfit in the processes of voltage amplifying and steep switching for NC-FET. It suggests that new device design rules need to consider this scenario to optimize performance.
MATERIALS RESEARCH EXPRESS
(2021)
Article
Chemistry, Multidisciplinary
Sarbashis Das, Saptarshi Das
Summary: We introduced a high-performance and ultra-steep slope switch called the strain effect transistor (SET), which achieved a subthreshold swing less than 0.68 mV/decade for a 7 orders of magnitude change in the source-to-drain current by utilizing the strain effect of piezoelectric material PZT. The SET exhibited low OFF-state current, high ON-state current, high ON/OFF current ratio, and high transconductance, along with fast switching speed and long device life.
Article
Nanoscience & Nanotechnology
Wei Li, Qingrui Jia, Yumei Pan, Xi'an Chen, Yue Yin, Yupan Wu, Yucheng Wang, Yi Wen, Chao Wang, Shaoxi Wang
Summary: This study proposed a novel T-shaped gate TFET based on silicon with ferroelectric material, NC-TGTFET, which exhibits a steep subthreshold swing and high on-state current. Analysis using simulation tools explored the influences of thickness, doping concentration, and ferroelectric material properties on the characteristics of NC-TGTFET.
Article
Physics, Condensed Matter
Shaoxi Wang, Xian Chen, Yumei Pan, Qingrui Jia, Yue Yin, Yupan Wu, Yucheng Wang, Wei Li
Summary: A novel silicon-based dual source U-shaped channel TFET with negative capacitance is proposed and investigated, showing super-steep subthreshold swing and higher on-state current, making it suitable for low-power large-scale integrated circuits.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Engineering, Electrical & Electronic
Yuqin Xia, Lu Liu, Xinge Tao, Yuying Tian, Jing-Ping Xu
Summary: In this work, negative-capacitance field-effect transistors (NCFETs) based on Hf1-xAlxOy ferroelectric films were fabricated, and the effects of the Al content in Hf1-xAlxOy films and the thicknesses of the ferroelectric Hf1-xAlxOy layer/Al2O3 match layer on the electrical properties of the NCFETs were investigated. The results showed that by decreasing the Al content and increasing/decreasing the thicknesses of the ferroelectric layer/the match layer, the gate-stack of Hf1-xAlxOy/Al2O3 exhibited a larger remanent polarization intensity, and the subthreshold swing (SS) and total hysteresis of the NCFETs were reduced. The optimized device performance was achieved using Hf0.95Al0.05Oy ferroelectric film with a thickness of 10 nm and Al2O3 match layer with a thickness of 2 nm, resulting in a low SS of 35.4 mV/dec, high ON/OFF current ratio of 5.0 x 10(6), and negligible hysteresis of 36.2 mV. The enhanced ferroelectricity of Hf1-xAlxOy films and the good matching between the ferroelectric capacitance and MOS capacitance of devices under suitable structure and process parameters contributed to these improvements.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Hao Zhu, Yafen Yang, Xinyi Zhu, Parameswari Raju, Dimitris E. Ioannou, Qiliang Li
Summary: To overcome the limitations of subthreshold slope (SS) in metal-oxide-semiconductor field-effect transistors (MOSFETs), a negative quantum capacitance component has been introduced to achieve steep-slope switching. This research presents a sub-60-mV/dec MoS2 negative quantum capacitance FET (NQCFET) with single-layer graphene integrated in the gate-stack. By utilizing the negative quantum capacitance from the low density of states (DOS) in the 2-D single-layer graphene, the NQCFET demonstrates subthermionic switching with a minimum SS of 31 mV/dec. This prototype device offers a feasible approach for implementing negative quantum capacitance in FET architecture, opening up potential applications in steep-slope and low-power electronic devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Nanoscience & Nanotechnology
Sangho Lee, Yongsun Lee, Taeho Kim, Giuk Kim, Taehyong Eom, Hunbeom Shin, Yeongseok Jeong, Sanghun Jeon
Summary: To stabilize the negative capacitance effect, the dielectric must be integrated into a heterostructure with a ferroelectric film. However, in multidomain hafnia, the charge boosting effect is reduced due to a lowering of the depolarization field at each domain, and operating voltage increases due to voltage division at the dielectric.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Qianwen Wang, Pengpeng Sang, Fei Wang, Wei Wei, Jiezhi Chen
Summary: The study introduces a novel tunneling cold source FET utilizing a p-n junction as a cold source, achieving high ON/OFF current ratio and small subthreshold swing in low-power devices based on MoS2. It also demonstrates that defects engineering through atomic doping at the source can optimize device performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Bhaskar Awadhiya, Sameer Yadav
Summary: Negative Capacitance Field Effect Transistors (NCFETs) have superior performance compared to MOSFETs and may replace them in the future. In this study, we examined the performance of a 32 nm planar MOSFET with doped hafnium dioxide as a ferroelectric material. The simulation results showed that Sr-doped HfO2 has the closest capacitance matching with MOS capacitance, resulting in better device performance parameters. Additionally, a resistive load inverter using Sr-doped hafnium dioxide demonstrated advantages in noise margin and static power dissipation.
MICROELECTRONICS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Seungwon Go, Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyung Ju Noh, So Ra Park, Yoon Kim, Dae Hwan Kim, Sangwan Kim
Summary: A novel negative capacitance double-gate tunnel field-effect transistor with sidewall spacer engineering has been proposed to improve device performance by optimizing the design of the sidewall spacer, achieving lower subthreshold swing and higher on-off current ratio.
SOLID-STATE ELECTRONICS
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Yafen Yang, Kai Zhang, Yi Gu, Parameswari Raju, Qiliang Li, Li Ji, Lin Chen, Dimitris E. Ioannou, Qingqing Sun, David Wei Zhang, Hao Zhu
Summary: In this study, a steep-slope field-effect transistor (NQCFET) with negative quantum capacitance was designed and fabricated for the first time. By encapsulating a single-layer graphene in the gate stack of a MoS2 FET, subthermionic steep switching with a minimum subthreshold slope of 31 mV/dec and negligible hysteresis was achieved. The contribution of negative quantum capacitance from the low density of states in the electron system in single-layer graphene was experimentally and theoretically explored.
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
(2022)
Article
Engineering, Electrical & Electronic
Monali Sil, Sk Masum Nawa, Abhijit Mallik
Summary: This paper investigates the impact of a high-k spacer dielectric on the performance of HfO2-ferroelectric-based negative capacitance (NC)-FinFETs. While the high-k spacer improves the subthreshold swing and on-state current, it also increases the delay due to enhanced gate capacitance. However, the NC devices still exhibit lower delay than conventional devices with identical off-state current, owing to their higher on-state current.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Nanoscience & Nanotechnology
Jianguo Dong, Zhe Sheng, Rui Yu, Wennan Hu, Yue Wang, Haoran Sun, David Wei Zhang, Peng Zhou, Zengxing Zhang
Summary: The study demonstrates that using indium and ferroelectric hafnium zirconium oxide as materials can achieve WSe2 N-type negative capacitance field-effect transistors with significantly low subthreshold slope, potentially prolonging device miniaturization, achieving high gate control ability, and providing a new solution for low-power high-density electronic devices.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Xiangxin Gong, Lijun Xu, Pengpeng Sang, Yuan Li, Jiezhi Chen
Summary: The research introduces a strategy to design organic steep-slope nanoscale field-effect transistors with subthreshold swing breaking the thermionic limit of 60 mV/dec at room temperature. It is found that the cold-source mechanism and the interplay between electrodes and channel are critical for realizing doping-free organic steep-slope nano-FETs. Rational design of organic 2D materials can offer a route to overcome the Boltzmann tyranny in low-power nanoelectronic devices.
ORGANIC ELECTRONICS
(2022)
