期刊
APPLIED PHYSICS LETTERS
卷 113, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5052368
关键词
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资金
- NSF DMREF Program [1534303]
- AFOSR [FA9550-17-1-0048]
- NSF NNCI program [ECCS-1542081]
- NSF MRSEC program [DMR-1719875]
beta-Ga2O3 vertical trench Schottky barrier diodes (SBDs) are realized, demonstrating superior reverse blocking characteristics than the co-fabricated regular SBDs. Taking advantage of the reduced surface field effect offered by the trench metal-insulator-semiconductor structure, the reverse leakage current in the trench SBDs is significantly suppressed. The devices have a higher breakdown voltage of 1232V without optimized field management techniques, while having a specific on-resistance (R-on,R-sp) of 15 m Omega cm(2). An ultra-low leakage current density of < 1 mu A/cm(2) is achieved before breakdown, the lowest among all reported Ga2O3 Schottky barrier diodes. Fast electron trapping and slow de-trapping near the Al2O3/Ga2O3 interface are observed by repeated C-V measurements, which show an interface state ledge and positive shifts of flat-band voltages with increasing voltage stress. By comparison between pulsed and DC measurements, the device self-heating effect and the trapping effect are uncoupled. It is found that the trapping effect at the trench sidewall affects the on-resistance of the trench SBDs, even under pulsed conditions. With reduced trapping effect and better field management technique, the trench SBDs could further harvest the promising material properties of beta-Ga2O3. Published by AIP Publishing.
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