Article
Chemistry, Multidisciplinary
Kang Fu, Jianwei Fu, Feifei Qin, Xumin Gao, Ziqi Ye, Pengzhan Liu, Yongjin Wang
Summary: In a III-nitride multiple quantum well (MQW) diode biased with a forward voltage, electron-hole recombination inside the MQW region emits light, while the diode utilizes the photoelectric effect to sense light and displace electrons when higher-energy photons hit the device. This simultaneous emission-detection phenomenon occurs as both the injected and liberated electrons are gathered in the diode. 4x4 MQW diodes can translate optical signals into electrical signals for image construction in the range of 320 to 440 nm, which is crucial for the development of multifunctional, intelligent displays using MQW diode technology.
Article
Optics
Francesco P. Mezzapesa, Leonardo Viti, Lianhe Li, Valentino Pistore, Sukhdeep Dhillon, A. Giles Davies, Edmund H. Linfield, Miriam S. Vitiello
Summary: This study proposes an integrated architecture for generating high-power THz frequency optical frequency combs utilizing ultrafast THz polaritonic reflectors and THz QCLs. By adjusting group-delay dispersion and light-induced bleaching, the spectral reshaping of QCL emission and stable operation of FCs are achieved.
LASER & PHOTONICS REVIEWS
(2021)
Article
Nanoscience & Nanotechnology
Natsuko Urushihara, Tadahiko Hirai, Akansha Dager, Yuta Nakamura, Yuma Nishi, Ken Inoue, Ryo Suzuki, Makoto Tanimura, Kazuteru Shinozaki, Masaru Tachibana
Summary: Natural product-derived carbon dots have successfully achieved electroluminescence, showing great potential for applications in LEDs.
ACS APPLIED NANO MATERIALS
(2021)
Article
Telecommunications
Hongqi Zhang, Lu Zhang, Xianbin Yu
Summary: This paper provides an overview of state-of-the-art THz communications, focusing on key technologies of THz transceivers and communication systems. Recent progress on electronic and photonic THz transmitters is presented, along with a survey of THz receivers operating in direct- and heterodyne reception modes. Additionally, three types of THz wireless communication systems are reviewed, and the prospective key enabling technologies, challenges, and research directions for high-speed THz communication systems are discussed.
CHINA COMMUNICATIONS
(2021)
Article
Optics
Jinlong Piao, Junhua Wu, Ziqi Ye, Hao Zhang, Jinjia Li, Pengzhan Liu, Hao Wang, Ziping Cao, Yongjin Wang
Summary: In this study, a monolithic integration of a metal oxide semiconductor field effect phototransistor and a light-emitting diode on a GaN-on-Si LED epitaxial wafer was achieved. The integrated device showed promising performance as a UV detector and had potential applications in visible light communication.
Article
Physics, Applied
Junfeng Lu, Chengyu Zhang, Fangtao Li, Ru Wang, Feifei Qin, Gangyi Zhu
Summary: In this study, single-mode laser output was achieved by using a single CsPbBr3 perovskite microwire as an active microresonator, and the internal mechanisms of mode evolution and single-mode output were discussed in depth. The synergistic effect of intrinsic self-absorption and cavity size was found to be the dominant factor for single-mode lasing output.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Xiaoming Mo, Tao Li, Fengchang Huang, Zhuxin Li, Yulu Zhou, Tao Lin, Yifang Ouyang, Xiaoma Tao, Caofeng Pan
Summary: The research focuses on using copper(I) to fully substitute lead in order to produce high-quality, air stable yellow emitting CsCu2I3 single crystals. These single crystals exhibit a record photoluminescence quantum yield exceeding 50% and are capable of producing white light-emitting diodes that can work continuously for over 580 hours in air. Photodetectors fabricated using these single crystals show distinct UV response with a fast response time as low as 50.4 ms.
Article
Thermodynamics
Yang Peng, Xiwen Zhang, Jinglong Liu, Shuang Li, Yun Mou, Jian Xu, Mingxiang Chen
Summary: The study proposes a method to recycle waste heat from high-power lighting using a thermoelectric generator, successfully converting heat from LED chips into electrical energy to power a low-power indicator lamp.
ENERGY CONVERSION AND MANAGEMENT
(2021)
Article
Chemistry, Multidisciplinary
Nan Ma, Wei Li, Balaji Devakumar, Zongjie Zhang, Xiaoyong Huang
Summary: A novel efficient far-red-emitting phosphor CMLW:Mn4 for plant cultivation LED lighting was demonstrated, showing broad excitation bands and high internal quantum efficiency. The phosphors could be efficiently excited by near-ultraviolet and blue light, emitting intense far-red light suitable for indoor plant cultivation.
MATERIALS TODAY CHEMISTRY
(2021)
Article
Optics
Samu-Pekka Ojanen, Jukka Viheriala, Nouman Zia, Eero Koivusalo, Joonas Hilska, Heidi Tuorila, Mircea Guina
Summary: A discrete, tunable photonic integrated laser is demonstrated for multiwavelength spectroscopy. The laser combines a reflective semiconductor optical amplifier with a photonic integrated circuit, allowing for switching between three distinct emission wavelengths. The design simplifies the tuning mechanism compared to other hybrid lasers.
LASER & PHOTONICS REVIEWS
(2023)
Article
Optics
Samu-Pekka Ojanen, Jukka Viheriala, Nouman Zia, Eero Koivusalo, Joonas Hilska, Heidi Tuorila, Mircea Guina
Summary: Photonic integrated circuits fabricated using a Si3N4 waveguide platform exhibit low losses in a wide wavelength region. A high-performance integrated laser with broad wavelength tunability near a 2.6 μm wavelength region is demonstrated, based on a Si3N4 photonic integrated circuit incorporating a tunable reflector and a AlGaInAsSb/GaSb quantum-well gain element. The platform also supports low propagation loss up to 3.5 μm.
LASER & PHOTONICS REVIEWS
(2023)
Article
Chemistry, Physical
Xing Lin, Xingliang Dai, Zikang Ye, Yufei Shu, Zixuan Song, Xiaogang Peng
Summary: Thermoelectric-driven light-emitting diodes (TED-LEDs) driven by sub-bandgap electric work and Peltier heat offer enhanced power-conversion-efficiency and eliminate waste heat. However, cost-effective and high-efficiency TED-LEDs for III-V LEDs are not easily accessible. In this study, colloidal quantum dots (QDs) LEDs (QLEDs) are used to overcome the drawbacks of conventional LEDs. The optimized red-emitting QLED device fabricated using cost-effective solution processing techniques exhibits high power-conversion-efficiency and is suitable for solid-state lighting and high-resolution display. The TED-QLEDs show diffusion-dominated luminance at low driving voltages, and further improvement on charge transport is expected.
Article
Optics
Amjad Ali, Zeyad A. H. Qasem, Yibin LI, Qian LI, H. Y. Fu
Summary: In recent years, cesium lead bromide and cadmium selenide/zinc sulfide quantum dots have been widely studied to enhance the capacity of visible light communication and solid-state lighting. Liquid-phase color converter glass cavities and solid-phase color converter films were fabricated to investigate and compare their performance. A high-quality white laser diode was fabricated by combining blue LD with color conversion layers, achieving bright white light and high-speed visible light communication capability.
Article
Optics
Fangcai Chen, Jianan Zheng, Haoyu Ma, Wei Zhang, Liulu Fan, Fangxin Zhang, Ming Li, Altyeb Ali Abaker Omer, Xinyu Zhang, Wen Liu
Summary: A pulsed-lighting LED luminaire with geometrical optical solution is proposed to achieve uniform lighting and increase energy utilization efficiency. In an actual planting experiment, the average fresh weight of the plants under the pulsed-lighting LED luminaire was 33.1% higher than that under the conventional LED luminaire. The energy utilization efficiency of the pulsed-lighting LED luminaire is 22.9% higher than that of the conventional LED luminaire.
Article
Chemistry, Multidisciplinary
Guixin Qiu, Dunzhao Wei, Zhuojun Liu, Jin Liu
Summary: This study designs and demonstrates an on-substrate silicon nitride photonic crystal microcavity encapsulated by a layer of PMMA hosting CdSe/ZnS quantum dots. It aims to enhance the photoluminescence efficiency and radiation directionality of thin films with low concentration of QDs.
Article
Nanoscience & Nanotechnology
Xiao Tang, Kuang-Hui Li, Yue Zhao, Yanxin Sui, Huili Liang, Zeng Liu, Che-Hao Liao, Wedyan Babatain, Rongyu Lin, Chuanju Wang, Yi Lu, Feras S. Alqatari, Zengxia Mei, Weihua Tang, Xiaohang Li
Summary: The study demonstrates the epitaxial growth of technically important beta-Ga2O3 semiconductor thin films on flexible CeO2(001)-buffered Hastelloy tape, leading to the fabrication of flexible photodetectors with excellent photoelectrical performance. The photodetectors exhibit a responsivity of 4 X 10(4) mA/W and remain robust after more than 20,000 bending test cycles, showing potential for future applications in flexible oxide semiconductor devices.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Ceramics
Xiao Tang, Kuang-Hui Li, Che-Hao Liao, Jose Manuel Taboada Vasquez, Chuanju Wang, Na Xiao, Xiaohang Li
Summary: The study presents a novel CSD technique for depositing highly epitaxial indium and aluminum-doped Ga2O3 thin films, showing pure beta phase with good crystallization qualities. The incorporation of indium and aluminum shifts the crystallization of the thin films to lower and higher temperatures, respectively, and the bandgap of the sintered thin films can be tuned from 4.05 to 5.03 eV using mixed precursor solutions. Photodetectors based on the samples exhibit maximum photocurrents at different wavelengths, suggesting potential for producing high-quality bandgap tunable deep ultraviolet photoelectrical and high-power devices.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2022)
Article
Nanoscience & Nanotechnology
Shuchi Kaushik, Subhajit Karmakar, Prashant Bisht, Che-Hao Liao, Xiaohang Li, Ravendra Kumar Varshney, Bodh Raj Mehta, Rajendra Singh
Summary: In this work, we have utilized the optical phenomenon of localized surface plasmon resonance (LSPR) in metal nanoparticles (NPs) to significantly enhance the performance of solar-blind Al0.4Ga0.6N metal-semiconductor-metal photodetectors. The presence of palladium (Pd) NPs leads to a remarkable enhancement in the photo-to-dark current ratio (PDCR), responsivity, and specific detectivity of the Al0.4Ga0.6N PD at the wavelength of 280 nm. The enhanced performance is attributed to improved optical absorption, enhanced local electric field, and LSPR sensitization effect.
Article
Physics, Condensed Matter
Wen Gu, Yi Lu, Zhiyuan Liu, Che-Hao Liao, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaohang Li
Summary: The hole concentration in a strain-compensated B0.14Al0.86N/Al0.5Ga0.5N superlattice (SCSL) is investigated. The SCSL structure shows improved output characteristics and higher light output power compared to the bulk p-region structure, making it a promising candidate for high-performance UV LED.
MICRO AND NANOSTRUCTURES
(2022)
Article
Engineering, Electrical & Electronic
Zhiyuan Liu, Yi Lu, Yue Wang, Rongyu Lin, Chenxin Xiong, Xiaohang Li
Summary: This paper investigates the performance of AlGaN-based LEDs and discusses the polarization difference between the last quantum barrier (LQB) and the electron blocking layer (EBL). The study shows that InAlN/AlGaN heterojunctions can produce positive or negative sheet charges which is not possible with conventional AlGaN/AlGaN heterojunctions. By modulating the LQB/EBL polarization using InAlN, the proposed UV LED shows significant improvements in internal quantum efficiency, efficiency droop, and operating voltage.
IEEE PHOTONICS JOURNAL
(2022)
Article
Nanoscience & Nanotechnology
Feras AlQatari, Che-Hao Liao, Xiaohang Li
Summary: In this study, a high-quality mixed-phase BGaN film with a boron composition exceeding 10% was successfully grown using a horizontal-reactor metalorganic chemical vapor deposition method. The film has important applications in power electronics and ultraviolet light emitters.
Article
Chemistry, Multidisciplinary
Nam-In Kim, Miad Yarali, Mina Moradnia, Muhammad Aqib, Che-Hao Liao, Feras AlQatari, Mingtao Nong, Xiaohang Li, Jae-Hyun Ryou
Summary: To address the challenges posed by extreme environments in energy, transportation, aerospace, and defense applications, a piezoelectric sensor based on single-crystalline AlN transducers is developed. The sensor shows high sensitivities and output voltages up to 900 degrees C. Comparison with other materials highlights the importance of single crystallinity in piezoelectric devices for high-temperature operation. The use of AlN demonstrates its potential as a new solution for sensing in extreme environments.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Physical
Chuanju Wang, Feras AlQatari, Vishal Khandelwal, Rongyu Lin, Xiaohang Li
Summary: The origin of interfacial charges in Al2O3/Si and Al2O3/GaN was studied, and it was found that the chemical stoichiometry deviations at the interfaces caused the different interfacial charges.
APPLIED SURFACE SCIENCE
(2023)
Article
Physics, Applied
Xiao Tang, Yi Lu, Rongyu Lin, Che-Hao Liao, Yue Zhao, Kuang-Hui Li, Na Xiao, Haicheng Cao, Wedyan Babatain, Xiaohang Li
Summary: In this research, beta-Ga2O3/NiO heterostructures were directly grown on CeO2 buffered Hastelloy flexible substrates. The CeO2 buffer layer acted as a template for the epitaxial growth of single-oriented NiO and beta-Ga2O3. The resulting photodetectors on Hastelloy substrates exhibited good deformability, mechanical robustness, and high photocurrent under 284 nm light illumination.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
F. AlQatari, C-H Liao, R. R. Aguileta-Vazquez, X. Tang, S. Lopatin, X. Li
Summary: The electronic structure of B0.097Ga0.903N was determined by examining its bandgap and valence band offset (VBO). The bandgap was determined to be about 3.55 eV using UV-Vis spectroscopy, Schottky photodiodes, and electron energy-loss spectroscopy. The VBO between BGaN and AlN was found to be -1.1 +/- 0.1 eV using x-ray photoelectron spectroscopy (XPS), but the Kraut method failed to provide precise VBO due to core level interference. A different technique utilizing the alignment of Fermi levels was used to determine the BGaN/GaN alignment, which was found to be -0.3 +/- 0.1 eV.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Review
Engineering, Electrical & Electronic
Xiao Tang, Yi Lu, Xiaohang Li
Summary: Flexible Ga2O3 devices are becoming increasingly important in electronic products due to their unique properties. Ga2O3 has a higher bandgap, breakdown electric field, and dielectric constant than silicon, making it an ideal next-generation semiconductor material. It is also robust and can withstand harsh environments. Its excellent electron transport properties enable higher electrical switching speed. However, fabricating flexible Ga2O3 devices is challenging due to its brittleness and high crystallization temperatures.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Physics, Applied
Na Xiao, Saravanan Yuvaraja, Dhanu Chettri, Zhiyuan Liu, Yi Lu, Chehao Liao, Xiao Tang, Xiaohang Li
Summary: Annealing under different atmospheres can improve the electrical performance of indium oxide thin-film transistors by modifying the density of oxygen vacancies and hydroxyl/carbonate groups. The annealed thin-film transistors exhibit high field-effect mobility, high on/off current ratio, and controlled threshold voltage.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Yi Lu, Xuecui Zou, Shibin Krishna, Xiao Tang, Zhiyuan Liu, Mingtao Nong, Che-Hao Liao, Saravanan Yuvaraja, Mohamed Ben Hassine, Hossein Fariborzi, Xiaohang Li
Summary: By employing thermal mismatch engineering, a freestanding Ga2O3 membrane can be exfoliated from a pre-deposited Ga2O3/AlN template in a high-temperature environment. This technique allows the fabrication of vertical deep ultraviolet (DUV) photonics devices, providing better thermal management and avoiding the use of costly Ga2O3 substrates.
MATERIALS TODAY PHYSICS
(2023)
Article
Physics, Condensed Matter
Chunlei Zhao, Gaoqiang Deng, Lidong Zhang, Yang Wang, Yunfei Niu, Jiaqi Yu, Zhifeng Shi, Guotong Du, Xiaohang Li, Yuantao Zhang
Summary: Quaternary AlInGaN alloy provides more freedom in adjusting band gap and lattice constant independently, showing great potential in the fabrication of nitride optoelectronic and electronic devices. In this study, AlInGaN films were grown by metal-organic chemical vapor deposition, and p-type conduction was achieved in compositionally graded quaternary AlInGaN. Structural properties and surface morphology of the epilayers were characterized. The results confirm the smooth surface morphology without V-shaped pits in the quaternary AlInGaN film. Hall effect measurement shows that the grown graded AlInGaN is p-type.
MICRO AND NANOSTRUCTURES
(2022)
Article
Chemistry, Multidisciplinary
Can Zou, Qing Liu, Kai Chen, Fei Chen, Zixuan Zhao, Yunxuan Cao, Congcong Deng, Xingfu Wang, Xiaohang Li, Shaobin Zhan, Fangliang Gao, Shuti Li
Summary: Polarization-sensitive photodetectors are important in optics applications, but achieving high sensitivity is challenging. Previous photodetectors had limitations, such as external bias driving, lead toxicity, and poor stability. In this study, a high-performance polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu2I3/GaN heterostructure was demonstrated. The device exhibited an ultra-high polarization selectivity and outstanding stability, making it suitable for practical applications under harsh conditions. The research provides new insights into designing novel high-performance polarization-sensitive optoelectronic devices.
MATERIALS HORIZONS
(2022)
