Atomic layer deposition of Ti-HfO2 dielectrics

SrHfO3Films Grown on Si(100) by Plasma-Assisted Atomic Layer Deposition.

(2011) K. Black et al.   CHEMISTRY OF MATERIALS

Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks

(2010) C. Wiemer et al.   APPLIED PHYSICS LETTERS

Permittivity Enhanced Atomic Layer Deposited HfO2Thin Films Manipulated by a Rutile TiO2Interlayer

(2010) Minha Seo et al.   CHEMISTRY OF MATERIALS

Characterization upon potential properties of HfO2 stabilized by Y2O3 films as cubic phase

(2010) Lei Shi et al.   JOURNAL OF APPLIED PHYSICS

Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator

(2010) E. M. Bazizi et al.   JOURNAL OF APPLIED PHYSICS

In Situ Analysis of Dopant Incorporation, Activation, and Film Growth during Thin Film ZnO and ZnO:Al Atomic Layer Deposition

(2010) Jeong-Seok Na et al.   Journal of Physical Chemistry C

Atomic Layer Deposition of Gd-Doped HfO[sub 2] Thin Films

(2010) C. Adelmann et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Gd silicate: A high-k dielectric compatible with high temperature annealing

(2009) H. D. B. Gottlob et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Permittivity enhancement of hafnium dioxide high-κ films by cerium doping

(2008) P. R. Chalker et al.   APPLIED PHYSICS LETTERS