Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

The Degradation Process of High- $k~{\rm SiO}_{2}/{\rm HfO}_{2}$ Gate-Stacks: A Combined Experimental and First Principles Investigation

(2014) Ebrahim Nadimi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

(2014) Shojan Pavunny et al.   Materials

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

(2014) Chun Zhao et al.   Materials

Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

(2013) Benjamin L. French et al.   JOURNAL OF MATERIALS RESEARCH

Impact of high temperature annealing on La diffusion and flatband voltage (Vfb) modulation in TiN/LaOx/HfSiON/SiON/Si gate stacks

(2012) R. Boujamaa et al.   JOURNAL OF APPLIED PHYSICS

Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices

(2012) Yi Zhao   Materials

Study of Direct-Contact HfO2/Si Interfaces

(2012) Noriyuki Miyata   Materials

Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications

(2011) X. D. Huang et al.   APPLIED PHYSICS LETTERS

Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

(2010) C. Z. Zhao et al.   Nanoscale Research Letters

Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

(2009) A. Kerber et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Energy and Spatial Distributions of Electron Traps Throughout $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stacks as the IPD in Flash Memory Application

(2009) Xue Feng Zheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dielectric relaxation of lanthanum doped zirconium oxide

(2009) C. Z. Zhao et al.   JOURNAL OF APPLIED PHYSICS

Permittivity enhancement of hafnium dioxide high-κ films by cerium doping

(2008) P. R. Chalker et al.   APPLIED PHYSICS LETTERS

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Stress-Induced Positive Charge in Hf-Based Gate Dielectrics: Impact on Device Performance and a Framework for the Defect

(2008) Ce Z. Zhao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thermal stability of zircon (ZrSiO4)

(2008) Arno Kaiser et al.   JOURNAL OF THE EUROPEAN CERAMIC SOCIETY