Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
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Title
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
Authors
Keywords
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Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 252, Issue 5, Pages 940-945
Publisher
Wiley
Online
2014-12-29
DOI
10.1002/pssb.201451491
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Note: Only part of the references are listed.- High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
- (2013) M. J. Davies et al. APPLIED PHYSICS LETTERS
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- (2013) Justin Iveland et al. PHYSICAL REVIEW LETTERS
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- Temperature-dependence of the internal efficiency droop in GaN-based diodes
- (2011) J. Hader et al. APPLIED PHYSICS LETTERS
- Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
- (2011) Emmanouil Kioupakis et al. APPLIED PHYSICS LETTERS
- Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model
- (2010) W. W. Chow et al. APPLIED PHYSICS LETTERS
- Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes
- (2010) V. K. Malyutenko et al. APPLIED PHYSICS LETTERS
- Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells
- (2010) C. H. Wang et al. APPLIED PHYSICS LETTERS
- Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
- (2010) Aurélien David et al. APPLIED PHYSICS LETTERS
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- (2010) Emmanouil Kioupakis et al. PHYSICAL REVIEW B
- Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
- (2009) Jiuru Xu et al. APPLIED PHYSICS LETTERS
- Auger recombination rates in nitrides from first principles
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- On the origin of efficiency roll-off in InGaN-based light-emitting diodes
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