High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

(2012) S. Hammersley et al.   JOURNAL OF APPLIED PHYSICS

Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

(2012) N. I. Bochkareva et al.   SEMICONDUCTORS

Investigation of fast and slow decays in InGaN/GaN quantum wells

(2011) Guan Sun et al.   APPLIED PHYSICS LETTERS

An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

(2011) Jong-In Shim et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Carrier recombination dynamics inInxGa1−xN/GaNmultiple quantum wells

(2010) Colin-N. Brosseau et al.   PHYSICAL REVIEW B

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

(2009) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes

(2008) Yi Yang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES