Free-carrier absorption in nitrides from first principles

Optical waveguide simulations for the optimization of InGaN-based green laser diodes

(2010) Chia-Yen Huang et al.   JOURNAL OF APPLIED PHYSICS

510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

(2009) Takashi Miyoshi et al.   Applied Physics Express

500 nm electrically driven InGaN based laser diodes

(2009) Désirée Queren et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

(2009) Kenneth J. Vampola et al.   APPLIED PHYSICS LETTERS

Prospects for LED lighting

(2009) Siddha Pimputkar et al.   Nature Photonics

Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures

(2008) Anurag Tyagi et al.   Applied Physics Express

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B

Complex Quasiparticle Band Structure Induced by Electron-Phonon Interaction: Band Splitting in the1×1H/W(110)Surface

(2008) Asier Eiguren et al.   PHYSICAL REVIEW LETTERS

Momentum Dependence of the Electron-Phonon Coupling and Self-Energy Effects in SuperconductingYBa2Cu3O7within the Local Density Approximation

(2008) Rolf Heid et al.   PHYSICAL REVIEW LETTERS

Ab InitioFinite-Temperature Excitons

(2008) Andrea Marini   PHYSICAL REVIEW LETTERS

wannier90: A tool for obtaining maximally-localised Wannier functions

(2007) Arash A. Mostofi et al.   COMPUTER PHYSICS COMMUNICATIONS