Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors

Title
Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors
Authors
Keywords
-
Journal
Publisher
Wiley
Online
2014-05-05
DOI
10.1002/pssa.201431062

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