Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors
Published 2014 View Full Article
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Title
Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors
Authors
Keywords
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Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 211, Issue 9, Pages 2126-2133
Publisher
Wiley
Online
2014-05-05
DOI
10.1002/pssa.201431062
References
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