Investigation of State Stability of Low-Resistance State in Resistive Memory

Multilevel resistive switching with ionic and metallic filaments

(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

Investigation of the Reliability Behavior of Conductive-Bridging Memory Cells

(2009) R. Symanczyk et al.   IEEE ELECTRON DEVICE LETTERS

Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

(2009) D. Kamalanathan et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

(2009) Jaesik Yoon et al.   IEEE ELECTRON DEVICE LETTERS

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

(2009) Jaesik Yoon et al.   MICROELECTRONIC ENGINEERING

Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

(2008) Hisashi Shima et al.   APPLIED PHYSICS LETTERS

Resistive Memory Switching of $\hbox{Cu}_{x}\hbox{O}$ Films for a Nonvolatile Memory Application

(2008) H. B. Lv et al.   IEEE ELECTRON DEVICE LETTERS

Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

(2008) Yoshihiro Sato et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

(2008) Sung Hyun Jo et al.   NANO LETTERS