Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

(2012) Z. G. Ju et al.   APPLIED PHYSICS LETTERS

Research on Electrical Efficiency Degradation Influenced by Current Crowding in Vertical Blue InGaN-on-SiC Light-Emitting Diodes

(2012) Volodymyr K. Malyutenko et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

(2012) Jiaxing Wang et al.   JOURNAL OF APPLIED PHYSICS

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

(2012) David A. Browne et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Enhancement of wall-plug efficiency in vertical InGaN/GaN LEDs by improved current spreading

(2012) Jun Ho Son et al.   OPTICS EXPRESS

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

(2012) R M Farrell et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

III-Nitride Photonics

(2012) Nelson Tansu et al.   IEEE Photonics Journal

Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”

(2012) S. T. Tan et al.   IEEE Photonics Journal

Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

(2011) T. Detchprohm et al.   APPLIED PHYSICS LETTERS

Efficiency Enhancement of InGaN LEDs With an n-Type AlGaN/GaN/InGaN Current Spreading Layer

(2011) Hsueh-Hsing Liu et al.   IEEE ELECTRON DEVICE LETTERS

Improved Performance of an InGaN-Based Light-Emitting Diode With a p-GaN/n-GaN Barrier Junction

(2011) Yi-Jung Liu et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

(2011) Chi-Kang Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy

(2011) Arthur H. Reading et al.   OPTICS EXPRESS

Effect of current spreading on the efficiency droop of InGaN light-emitting diodes

(2011) Han-Youl Ryu et al.   OPTICS EXPRESS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

(2010) Hee Jin Kim et al.   APPLIED PHYSICS LETTERS

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Formation of Selective High Barrier Region by Inductively Coupled Plasma Treatment on GaN-Based Light-Emitting Diodes

(2010) Ting-Wei Kuo et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes

(2010) Zheng Gong et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

(2010) Hongping Zhao et al.   SOLID-STATE ELECTRONICS

Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

(2009) Yik-Khoon Ee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Improvement in the Light Output Power of GaN-Based Light-Emitting Diodes by Natural-Cluster Silicon Dioxide Nanoparticles as the Current-Blocking Layer

(2009) Chun-Fu Tsai et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

(2009) H.P. Zhao et al.   IET Optoelectronics

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

(2009) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire

(2009) Yik-Khoon Ee et al.   JOURNAL OF CRYSTAL GROWTH

Enhanced characteristics of blue InGaN∕GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length

(2008) Ray-Ming Lin et al.   APPLIED PHYSICS LETTERS